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Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE

Abstract : The growth of GaN 3-D microstructures is investigated by SAG-HVPE.
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https://hal.uca.fr/hal-03217102
Contributor : Evelyne Gil Connect in order to contact the contributor
Submitted on : Tuesday, May 4, 2021 - 3:56:20 PM
Last modification on : Thursday, February 3, 2022 - 9:02:04 AM

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Geoffrey Avit, Mohammed Zeghouane, yamina André, Dominique Castelluci, Evelyne Gil, et al.. Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE. CrystEngComm, Royal Society of Chemistry, 2018, 20 (40), pp.6207-6213. ⟨10.1039/c8ce01177j⟩. ⟨hal-03217102⟩

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