Journal articles
Electronic Band Transitions in γ-Ge3N4
Abstract : Electronic band structure in germanium nitride having spinel structure, γ-Ge3N4, was examined using two spectroscopic techniques, cathodoluminescence and synchrotron-based photoluminescence. The sample purity was confirmed by x-ray diffraction and Raman analyses. The spectroscopic measurements provided first experimental evidence of a large free exciton binding energy De≈0.30 eV and direct interband transitions in this material. The band gap energy Eg = 3.65 ± 0.05 eV measured with a higher precision was in agreement with that previously obtained via XES/XANES method. The screened hybrid functional Heyd–Scuseria–Ernzerhof (HSE06) calculations of the electronic structure supported the experimental results. Based on the experimental data and theoretical calculations, the limiting efficiency of the excitation conversion to light was estimated and compared with that of w-GaN, which is the basic material of commercial light emitting diodes. The high conversion efficiency, very high hardness and rigidity combined with a thermal stability in air up to ~ 700 °C reveal the potential of γ-Ge3N4 for robust and efficient photonic emitters.
https://hal.uca.fr/hal-03206152
Contributor : Sylvaine Jouhannel Connect in order to contact the contributor
Submitted on : Tuesday, September 7, 2021 - 3:20:16 PM
Last modification on : Tuesday, October 19, 2021 - 7:02:01 PM
Contributor : Sylvaine Jouhannel Connect in order to contact the contributor
Submitted on : Tuesday, September 7, 2021 - 3:20:16 PM
Last modification on : Tuesday, October 19, 2021 - 7:02:01 PM
File
Feldbach et al_2021_Electronic...
Files produced by the author(s)
Licence
Distributed under a Creative Commons Attribution 4.0 International License
