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Limitation of simple np-n tunnel junction based LEDs grown by metal-organic vapor phase epitaxy

Abstract : We show evidence that tunnel junctions (TJs) in GaN grown by metal-organic vapor phase epitaxy are dominated by defect level-assisted tunneling. This is in contrast with the common belief that highly doped layers (> 10 20 cm-3) are required to narrow the TJ space charge region and promote the band-to-band tunneling. Our conclusion stems from the study and the review of the major doping limitations of carefully optimized p ++ and n ++ layers. The secondary ions mass spectroscopy profiles of GaN based TJ LEDs show a strong oxygen concentration located close to the p ++ /n ++ interface, typical for three dimensional growth. In addition, considering the doping limitation asymmetry and Mg carry-over, our simulations indicate a depletion region of more than 10 nm which is buried in a rough and defective n ++ layer. However, decent electrical characteristic of the studied TJ based LEDs are obtained, with a low penalty voltage of 1.1 V and a specific differential resistance of about 10-2 2 at 20 mA. This indicates that common TJ could be greatly optimized by using a moderate doping (~10 19 cm-3) while intentionally introducing local defects within the TJ.
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Contributor : Evelyne Gil <>
Submitted on : Tuesday, November 17, 2020 - 1:10:54 PM
Last modification on : Friday, November 20, 2020 - 3:23:10 AM


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Y Robin, Q Bournet, G Avit, M Pristovsek, Y André, et al.. Limitation of simple np-n tunnel junction based LEDs grown by metal-organic vapor phase epitaxy. Semiconductor Science and Technology, IOP Publishing, 2020, 35 (11), pp.115005. ⟨10.1088/1361-6641/abad73⟩. ⟨hal-03009678⟩



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