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Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy

Abstract : Gold-free GaAs nanowires on silicon substrates can pave the way for monolithic integration of photonic nanodevices with silicon electronic platforms. It is extensively documented that the self-catalyzed approach works well in molecular beam epitaxy but is much more difficult to implement in vapor phase epitaxies. Here, we report the first gallium-catalyzed hydride vapor phase epitaxy growth of long (more than 10 mu m) GaAs nanowires on Si(111) substrates with a high integrated growth rate up to 60 mu mh(-1) and pure zincblende crystal structure. The growth is achieved by combining a low temperature of 600 degrees C with high gaseous GaCl/As flow ratios to enable dechlorination and formation of gallium droplets. GaAs nanowires exhibit an interesting bottle-like shape with strongly tapered bases, followed by straight tops with radii as small as 5 nm. We present a model that explains the peculiar growth mechanism in which the gallium droplets nucleate and rapidly swell on the silicon surface but then are gradually consumed to reach a stationary size. Our results unravel the necessary conditions for obtaining galliumcatalyzed GaAs nanowires by vapor phase epitaxy techniques.
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Contributor : Evelyne Gil Connect in order to contact the contributor
Submitted on : Thursday, December 7, 2017 - 2:52:49 PM
Last modification on : Monday, November 29, 2021 - 8:26:04 AM



Zhenning Dong, Yamina Andre, Vladimir G Dubrovskii, Catherine Bougerol, Christine Leroux, et al.. Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy. Nanotechnology, Institute of Physics, 2017, 28 (12), pp.125602. ⟨10.1088/1361-6528/aa5c6b⟩. ⟨hal-01658266⟩



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