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MOVPE grown periodic AlN/BAlN heterostructure with high boron content

Abstract : Five-period AlN/BAlN heterostructure containing boron as high as 11% has been successfully grown by MOVPE. Good periodicity of two alternative layers has been observed by both SIMS profile and Z-contrast HAADF-STEM images. The BAlN layers demonstrate columnar polycrystalline feature. The BAlN layers exhibit an emission peak by CL and absorption edge in transmission spectra at around 260 nm. The results enable the development of BAlGaN based multi-layered heterostructure for UV and deep UV applications.
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Submitted on : Thursday, January 13, 2022 - 10:59:41 PM
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Long-term archiving on: : Friday, April 15, 2022 - 2:02:41 AM

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Xin Li, Suresh Sundaram, Youssef El-Gmili, Frédéric Genty, Sophie Bouchoüle, et al.. MOVPE grown periodic AlN/BAlN heterostructure with high boron content. Journal of Crystal Growth, Elsevier, 2015, 414, pp.119-122. ⟨10.1016/j.jcrysgro.2014.09.030⟩. ⟨hal-01212596⟩

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